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IGBTs
2PG401
Insulated Gate Bipolar Transistor
s Features
q High breakdown voltage: VCES = 400V q Allowing to control large current: IC(peak) = 130A q Allowing to provide with the surface mounting package
7.20.3 0.80.2
unit: mm
7.00.3 3.00.2
3.50.2
s Applications
q For flash-light for use in a camera
1.10.1
0.850.1 0.40.1
1.00.2
s Absolute Maximum Ratings (TC = 25C)
Parameter Collector to emitter voltage Gate to emitter voltage Collector current Allowable power dissipation Channel temperature Storage temperature DC Pulse TC = 25C Ta = 25C Symbol VCES VGES IC ICP PC Tch Tstg Ratings 400 8 5 130 15 1.3 150 -55 to +150 Unit V V A A W C C
1 4.60.4 2 3
10.0 -0.
+0.3
0.750.1
2.30.2
1: Gate 2: Collector 3: Emitter I Type Package
s Electrical Characteristics (TC = 25C)
Parameter Collector to emitter cut-off current Gate to emitter leakage current Collector to emitter breakdown voltage Gate threshold voltage Collector to emitter saturation voltage Input capacitance (Common Emitter) Turn-on time (delay time) Rise time Turn-off time (delay time) Fall time Symbol ICES IGES VCES VGE(th) VCE(sat) Cies td(on) tr td(off) tf VCC = 300V, IC = 130A VGE = 5V, Rg = 25 Conditions VCE = 320V, VGE = 0 VGE = 8V, VCE = 0 IC = 1mA, VGE = 0 VCE = 10V, IC = 1mA VGE = 5V, IC = 5A VGE = 5V, IC = 130A VCE = 10V, VGE = 0, f = 1MHz 1930 130 1.4 350 1.5 400 0.5 1.5 2 10 min typ max 10 1 Unit A A V V V pF ns s ns s
1
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2001 MAR

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